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东芝-Feature

东芝 announced today that it has begun sampling its own 3D 与非 memory. For the past nine months, 三星 has owned the 3D 与非, or V-NAND business. But that could change by the end of this year as 东芝’s own designs start hitting the market. 东芝 is trying to leapfrog 三星’具有48层内存的最大密度,与韩国制造商相反’当前的32层设计。

让’s talk layers

三星称其3D 与非方法“Charge Trap Flash,” while 东芝 has dubbed its implementation “Bit Cost Scalable.” While there are likely some differences, the two approaches are said to be broadly similar. Typical 与非 has historically been manufactured using a floating gate. Both designs trap electrons, but in 充电陷阱闪光灯, the trapping layer is an insulator rather than a conductive floating gate. This has become particularly important as 处理 节点 have shrunk —NAND浮栅在较小的工艺几何尺寸下泄漏更多。

东芝’与三星目前正在发售的32层设计相比,其48层设计应使其密度更高。’s current chips are 86Gbit compared to 128Gbit for the upcoming 东芝 products. We don’t know what 处理 node 东芝 is using for this technology —该公司一直在迅速讨论其2D平面产品,该产品将在今年Tosh所谓的15nm节点上取得进展,但是’s no word on the 3D products. Presumably 东芝, like 三星, is using an older 处理 node —可能是其32纳米技术。

东芝 BICs

东芝’s Bit Cost Scalable

Right now, 东芝 has a theoretical 16-layer advantage over its rival, but that could narrow by the time this 与非 is actually shipping. Today’s announcement is that 东芝 is sampling hardware, but it won’直到公司全力以赴’Fab 2将于2016年上半年上线。届时,美光也应拥有自己的3D解决方案。

对于消费者而言,这种转变的最终结果将是进一步降低SSD的成本。从长远来看,预计机械硬盘仍将比固态硬盘便宜。但是3D制造技术的出现可能会将闪存价格推低至每GB 20美分以下—与硬盘驱动器成本相比,数量级在一个数量级之内。

至少到目前为止,3D 与非的另一个优势是提高了可靠性和耐用性。 测试SSD的可靠性 是一个挑剔的过程—设备可能会通过多种方式发生故障—但是较低进程节点的缺点之一是寿命降低和编程/擦除周期计数降低。 三星’s 850 Pro 在我们的所有消费类驱动器中具有最高的P / E计数和总保证写入容量’多年来,由于其40nm工艺节点,我们已经看到了很多。希望我们’ll see similar results from 东芝 和 美光与英特尔 当他们的3D 与非最终上市时。